Messaggio: # 16013Messaggio
Zanzara8
gio 18 nov 2021, 6:47
The all silicon transistor Integrated Amplifier which adopted the same silicon power transistor as AU-555.
The low-noise silicon transistor sorted out by especially the equalizer circuitry has adopted the silicon transistor as a whole page including using the epitaxial silicon transistor for a power transistor.
For this reason, the interval has taken the large dynamic range as there are few distortion at the time of a low power output and S/Ns and they are the Oide power.
The SEPP-ITL-OTL scheme of a complimentary darlington circuit is adopted as the circuit system of a power amplifier part.
All the amplifying circuits from the first rank to the final output stage consist of NF amplifier.
The power limiter scheme with which the signal more than the drive voltage which the maximum output takes is not added to a power transistor, and the immediate judgment fuse are used for a protection network.
Two Phono input terminals serve as a design which differs in an impedance by Phono1 and Phono2, and can be properly used by liking of a specification append resistor of a cartridge and a tone.
The power transformer for transistor amplifier which demonstrated the transformer technology of the SANSUI and was designed is adopted as a transformer.
Accessories circuitries, such as a high filter, a low filter, a loudness control, a DIN connector, a tapes monitor circuitry, and a headset jack, are carried.